MT3S40FS 1 2003-02-14 toshiba transistor silicon npn epitaxial planer type MT3S40FS vco oscilletor stage uhf low noise amplifier application features low noise figure :nf=1.2db (@f=2ghz) high gain:|s21e| 2 =11.0db (@f=2ghz) marking maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 8 v collector-emitter voltage v ceo 4.5 v emitter-base voltage v ebo 1.5 v collector-current i c 70 ma base-current i b 35 ma collector power dissipation p c (note) 100 mw junction temperature t j 150 c storage temperature range t stg ? 55~150 c note: device mounted on a glass-epoxy pcb(0.88 cm 2 0.7 mm (t)) unit:mm 0.15 0.05 0.35 0.05 0.6 0.05 0.2 0.05 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 1 2 3 0.1 0.05 0.48 +0.02 -0.04 1.base 2.emitter 3.collector fsm jedec - jeita - toshiba 2-1e1a weight: 0.0006 g 2 1 3 2 5
MT3S40FS 2 2003-02-14 microwave characteristics (ta = 25c) characteristics symbol test condition min typ. max unit transition frequency ft v ce =3v, i c =20ma, f=2ghz 13 17 - ghz |s21e| 2 (1) v ce =3v, i c =20ma, f=1ghz 14.5 16.5 - db insertion gain |s21e| 2 (2) v ce =3v, i c =20ma, f=2ghz 9 11 - db nf(1) v ce =3v, i c =5ma, f=1ghz - 0.9 - db noise figure nf(2) v ce =3v, i c =5ma, f=2ghz - 1.2 1.8 db electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb =8v, i e =0 - - 1 a emitter cut-off current i ebo v eb =1v, i c =0 - - 1 a dc current gain hfe v ce =3v, i c =20ma 70 - 140 - output capacitance c ob v cb =1v, i e =0, f=1mhz - 0.61 0.95 pf reverse transistor capacitance c re v cb =1v, i e =0, f=1mhz (note 1) - 0.38 0.70 pf note 1: cre is measured by 3 terminal method with capacitance bridge. caution: this device is sensitive to electrostatic discharge. please make enough tool and equipment earthed when you handle.
MT3S40FS 3 2003-02-14 |s2 1 e| 2 -i c 1 v vce=3v f= 1 ghz ta=25 0 5 1 0 1 5 20 11 0 1 00 collector current i c (ma) insertion gain |s2 1 e| 2 (db) |s2 1 e| 2 -i c 1 v vce=3v f=2ghz ta=25 0 5 1 0 1 5 11 0 1 00 collector current i c (ma) insertion gain |s2 1 e| 2 (db) ft-i c 1 v vce=3v f=2ghz ta=25 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 20 11 0 1 00 collector current i c (ma) transition frequency ft(ghz) cre,cob-v cb cob cre ie=0 f= 1 mhz ta=25 0.0 0. 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0. 11 1 0 collector-base voltage v cb (v) reverse transfer capacitance cre(pf) output capacitance cob(pf) nf,ga-i c nf f=2ghz vce=3v ta=25 ga 0.0 0.5 1 .0 1 .5 2.0 2.5 3.0 3.5 4.0 11 0 1 00 collector current i c (ma) noise figure nf(db) 0 2 4 6 8 1 0 1 2 1 4 1 6 associated gain ga(db) p c -ta 0 25 50 75 1 00 1 25 1 50 0255075 1 00 1 25 1 50 1 75 ambient temperature ta( ) collector power dissipation pc(mw) device mounted on a glass-epoxy pcb (0.88cm 2 x 0.7mm(t))
MT3S40FS 4 2003-02-14 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eaa restrictions on product use
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